Thyristors（SCRs) 晶闸管（可控硅）--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
S1PHB41GK14B		40	85	1400	430	0.88	13	1000	125	0.98	Fig. 59	PDF
S1PHB41GK16B		40	85	1600	430	0.88	13	1000	125	0.98	Fig. 59	PDF
S1PHB41GK18B		40	85	1800	430	0.88	13	1000	125	0.98	Fig. 59	PDF
S1PHB50GK08B		50	85	800	540	1.64	11	1000	125	0.9	Fig. 59	PDF
S1PHB50GK12B		50	85	1200	540	1.64	11	1000	125	0.9	Fig. 59	PDF
S1PHB50GK14B		50	85	1400	540	1.64	11	1000	125	0.9	Fig. 59	PDF
S1PHB50GK16B		50	85	1600	540	1.64	11	1000	125	0.9	Fig. 59	PDF
S1PHB50GK18B		50	85	1800	540	1.64	11	1000	125	0.9	Fig. 59	PDF
S1PHB75GK08B		75	85	800	810	0.83	10.5	1000	125	0.85	Fig. 59	PDF
S1PHB75GK12B		75	85	1200	810	0.83	10.5	1000	125	0.85	Fig. 59	PDF
S1PHB75GK14B		75	85	1400	810	0.83	10.5	1000	125	0.85	Fig. 59	PDF
S1PHB75GK16B		75	85	1600	810	0.83	10.5	1000	125	0.85	Fig. 59	PDF
S1PHB75GK18B		75	85	1800	810	0.83	10.5	1000	125	0.85	Fig. 59	PDF
S3PHBD70G08B		70	85	800	550	0.85	11	1000	125	0.9	Fig. 41	PDF
S3PHBD70G12B		70	85	1200	550	0.85	11	1000	125	0.9	Fig. 41	PDF
S3PHBD70G14B		70	85	1400	550	0.85	11	1000	125	0.9	Fig. 41	PDF
S3PHBD70G16B		70	85	1600	550	0.85	11	1000	125	0.9	Fig. 41	PDF
S3PHBD110G08B		110	85	800	1150	0.85	11	1000	125	0.65	Fig. 43	PDF
S3PHBD110G12B		110	85	1200	1150	0.85	11	1000	125	0.65	Fig. 43	PDF
S3PHBD110G16B		110	85	1600	1150	0.85	11	1000	125	0.65	Fig. 43	PDF

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