Thyristor-Diode Modules--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
STD200GK14	314	200	85	1400	8000	0.95	1.0	1000	125	0.14	Fig. 20	PDF
STD200GK16	314	200	85	1600	8000	0.95	1.0	1000	125	0.14	Fig. 20	PDF
STD200GK18	314	200	85	1800	8000	0.95	1.0	1000	125	0.14	Fig. 20	PDF
STD320GK08	502	320	85	800	9200	0.8	0.82	1000	140	0.112	Fig. 21	PDF
STD320GK12	502	320	85	1200	9200	0.8	0.82	1000	140	0.112	Fig. 21	PDF
STD320GK14	502	320	85	1400	9200	0.8	0.82	1000	140	0.112	Fig. 21	PDF
STD320GK16	502	320	85	1600	9200	0.8	0.82	1000	140	0.112	Fig. 21	PDF
STD320GK18	502	320	85	1800	9200	0.8	0.82	1000	140	0.112	Fig. 21	PDF
STD49GK08B	76	49	85	800	1150	0.85	5.3	1000	125	0.365	Fig.18	PDF
STD49GK12B	76	49	85	1200	1150	0.85	5.3	1000	125	0.365	Fig.18	PDF
STD49GK14B	76	49	85	1400	1150	0.85	5.3	1000	125	0.365	Fig.18	PDF
STD49GK16B	76	49	85	1600	1150	0.85	5.3	1000	125	0.365	Fig.18	PDF
STD49GK18B	76	49	85	1800	1150	0.85	5.3	1000	125	0.365	Fig.18	PDF
STD60GK08B	94	60	85	800	1500	0.85	3.7	1000	125	0.325	Fig.18	PDF
STD60GK12B	94	60	85	1200	1500	0.85	3.7	1000	125	0.325	Fig.18	PDF
STD60GK14B	94	60	85	1400	1500	0.85	3.7	1000	125	0.325	Fig.18	PDF
STD60GK16B	94	60	85	1600	1500	0.85	3.7	1000	125	0.325	Fig.18	PDF
STD60GK18B	94	60	85	1800	1500	0.85	3.7	1000	125	0.325	Fig.18	PDF
STD60GK20B	94	60	85	2000	1500	0.85	3.7	1000	125	0.325	Fig.18	PDF
STD70GK08B	110	70	85	800	1600	0.85	3.2	1000	125	0.300	Fig.18	PDF

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