Thyristor-Diode Modules--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
STD49GK18	76	49	85	1800	1150	0.85	5.3	1000	125	0.53	Fig. 36	PDF
SDT49GK08	76	49	85	800	1150	0.85	5.3	1000	125	0.53	Fig. 36	PDF
SDT49GK12	76	49	85	1200	1150	0.85	5.3	1000	125	0.53	Fig. 36	PDF
SDT49GK14	76	49	85	1400	1150	0.85	5.3	1000	125	0.53	Fig. 36	PDF
SDT49GK16	76	49	85	1600	1150	0.85	5.3	1000	125	0.53	Fig. 36	PDF
SDT49GK18	76	49	85	1800	1150	0.85	5.3	1000	125	0.53	Fig. 36	PDF
STD60GK08	94	60	85	800	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK12	94	60	85	1200	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK14	94	60	85	1400	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK16	94	60	85	1600	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK18	94	60	85	1800	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
SDT60GK08	94	60	85	800	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
SDT60GK12	94	60	85	1200	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
SDT60GK14	94	60	85	1400	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
SDT60GK16	94	60	85	1600	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
SDT60GK18	94	60	85	1800	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK08	110	70	85	800	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK12	110	70	85	1200	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK14	110	70	85	1400	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK16	110	70	85	1600	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF

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